三星开始量产20纳米级DDR4超高速内存模块

据韩联社消息，三星电子表示已开始量产超高速内存——20纳米级16GB DDR4模块，并计划加快进军企业服务器市场的步伐。 　　20纳米级16GB DDR4 DRAM产品体积世界最小，最高处理速度可达2667Mb/s，和DDR3 DRAM相比，耗电量减少30%以上，速度提高1.25倍。三星预计，随着DDR4的量产，市场上的企业服务器也将迅速由DDR3替换成低耗电高性能的DDR4。

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　　三星电子表示，从服务器到手机，随着DDR4的量产，三星将向顾客提供耗电低性能高的绿色内存解决方案，提供16GB和32GB两种规格内存模组。 三星在发言稿中表示：“今年我们将会通过超高速DDR4内存来继续推动企业级服务器的发展，继今年早些时候开始供应16GB的DDR3之后，今年我们将会继续扩大高端服务器市场的份额，并将重点放在具备更高密度更高性能的32GB的DDR4内存上，并有望在2014年在绿色IT市场上赢得突破性的增长。” 本文为《国际电子商情》原创，版权所有，谢绝转载 参考英文原文：Samsung Starts Volume Production of DDR4 Memory，Peter Clarke

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{pagination} Samsung Starts Volume Production of DDR4 Memory Peter Clarke Samsung Electronics Co. Ltd. has started volume production of DDR4 format memory, for use in enterprise servers in datacenters. Samsung is offering 4 Gbit DRAMs made using a nm-class manufacturing process. Samsung uses 20 nm-class to denote a gate length of between 20 and 29 nm. These 4 Gbit DRAM ICs are assembled into 16 Gbyte and 32 Gbyte memory modules. These will replace 8 Gbyte memory modules based on 30 nm DRAMs and 16 Gbyte DDR3 memory modules, Samsung said. The 4 Gbit-based DDR4 has a data transmission rate of 2.667 Gbit/s, a 25 percent increase over 20 nm-class DDR3, while lowering power consumption by more than 30 percent, Samsung said. DDR4 is the latest version of the double data-rate interface standard for synchronous DRAM as mandated by JEDEC, which was the Joint Electron Device Engineering Council but is now the JEDEC Solid State Technology Association. "After providing cutting-edge performance with our timely supply of 16Gbyte DDR3 earlier this year, we are continuing to extend the premium server market in 2013 and will now focus on higher density and added performance with 32GB DDR4," said Young-Hyun Jun, executive vice president of memory sales and marketing at Samsung, in a press release.